Nanoelectronics opens new doors to tremendous innovation because material and device behavior can be radically different at the nanoscale, allowing new properties and functionalities to emerge, but also creating significant new measurement challenges. Those who can engineer this new functionality into new devices and tools may gain tremendous advantages and huge economic and technical rewards. NIST is developing the nanoengineering measurement infrastructure that is necessary to facilitate the transition of nanoelectronics from the lab to the commercial market. I will discuss some of the ways that NIST is developing metrology that will help enable new nanoelectronic information processing technologies to supplement and/or supplant conventional complementary metal oxide semiconductor (CMOS) devices that are the basis of today’s integrated circuits. I will describe research relating to some specific emerging nanoelectronic technologies such as nanowire-based field effect transistors, molecular electronics, and memristors.
Curt A. Richter, Ph.D. received his B.S. degree from The College of William and Mary, Williamsburg, VA in 1987 and the M.S., M.Phil., and Ph.D. degrees in Applied Physics from Yale University, New Haven, CT (1990, 1991, and 1993 respectively). After matriculation from Yale, Dr. Richter joined the Semiconductor Electronics Division of the National Institute of Standards and Technology, Gaithersburg, MD. He is currently Leader of the Nanoelectronic Device Metrology Project which is developing measurement science infrastructure for post-CMOS technologies that show promise to extend traditional scaling laws for increased computational performance beyond the limits of conventional CMOS. Richter is an author of more than 85 technical articles and editor of one book, and one journal. Dr. Richter is a Senior Member of the IEEE. Among his technical leadership activities, he is part of the ITRS ERM Working Group, is a TAB Member for the SRC, and is an NNI advisor.